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APT5016BFLL APT5016SFLL
500V 30A 0.160
POWER MOS 7
(R)
R
FREDFET
D3PAK
TO-247
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
* Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT5016BFLL_SFLL UNIT Volts Amps
500 30 120 30 40 329 2.63 -55 to 150 300 30 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
500 0.160 250 1000 100 3 5
(VGS = 10V, 15A)
Ohms A nA Volts
6-2004 050-7026 Rev C
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT5016BFLL_SFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 30A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 30A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 333V VGS = 15V ID = 30A, RG = 5 ID = 30A, RG = 5 RG = 1.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
2833 600 60 72 16 42 10 10 27 14 256 172 476 215
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
30 120 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -30A)
dv/ 5 dt
t rr Q rr IRRM
Reverse Recovery Time (IS = -30A, di/dt = 100A/s) Reverse Recovery Charge (IS = -30A, di/dt = 100A/s) Peak Recovery Current (IS = -30A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
250 500 1.3 4.5 12 18
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.38 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.40
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 2.89mH, RG = 25, Peak IL = 30A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID30A di/dt 700A/s VR 500 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5
0.9
0.7
0.5 Note:
PDM
6-2004
0.3 SINGLE PULSE
t1 t2
050-7026 Rev C
JC
0.1 0.05 10-4
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
Z
10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-3
10-2
1.0
Typical Performance Curves
Junction temp. (C) RC MODEL
80
APT5016BFLL_SFLL
8V 15 &10V 7.5V 7V
ID, DRAIN CURRENT (AMPERES)
0.0174
0.00401F
60
Power (watts)
0.143
0.00641F
40 6.5V
0.219 Case temperature. (C)
0.158F
20
6V 5.5V
0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.2
NORMALIZED TO V = 10V @ 15A
GS
ID, DRAIN CURRENT (AMPERES)
80
1.15 1.1 1.05 VGS=20V 1.0 0.95 0.9 0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
60
VGS=10V
40 TJ = +125C TJ = +25C 0 TJ = -55C
20
0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
30 25 20 15 10 5 0 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I V
D
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
1.10 1.05 1.00 0.95 0.90 0.85 -50
25
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
= 15A = 10V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7026 Rev C
6-2004
Typical Performance Curves
120
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
10,000 5,000
APT5016BFLL_SFLL
Ciss
C, CAPACITANCE (pF)
1,000 Coss
100S 10
100 Crss
1mS TC =+25C TJ =+150C SINGLE PULSE
1
10mS
1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
10
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I = 30
200 100 50 TJ =+150C TJ =+25C
14 12 10 8 6 4 2 10 20 30 40 50 60 70 80 90 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 60 td(off) 50 0 0 VDS=100V VDS=250V
VDS=400V
10 5
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 60 50
V
DD G
= 333V
R
= 5
T = 125C
J
L = 100H
td(on) and td(off) (ns)
40 30 20 10 0
V
DD G
= 333V
40
tr and tf (ns)
tf
R
= 5
T = 125C
J
L = 100H
30 20 10 0 tr
td(on)
0
ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10
20
30
40
50
30 40 50 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1200 1000
SWITCHING ENERGY (J)
V I
DD
0
10
20
1000
= 333V
= 333V
R
= 5
D J
= 30A
SWITCHING ENERGY (J)
800
T = 125C
J
T = 125C L = 100H EON includes diode reverse recovery.
L = 100H E ON includes diode reverse recovery.
Eoff
800 600 400 200 0
600 Eon 400
Eon
6-2004
200
Eoff
050-7026 Rev C
0
ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0
10
20
30
40
50
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
APT5016BFLL_SFLL
Gate Voltage
10 % TJ = 125 C td(on) tr
Drain Current
90%
Gate Voltage T = 125 C J
t
d(off)
t
d(off)
Drain Voltage
90% 5%
Drain Voltage Switching Energy
90%
5%
Switching Energy
10 %
tf
10% 0
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7026 Rev C
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
6-2004
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
3.81 (.150) 4.06 (.160) (Base of Lead)

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